
High Speed 870nm Infrared Emitting Diode SMD package
- Payment Type:
- T/T, Paypal, Western Union
- Incoterm:
- FOB, EXW, FCA
- Min. Order:
- 5000 Piece/Pieces
- Min. Order:
- 5000 Piece/Pieces
- Delivery Time:
- 5-7 Business Days
- Transportation:
- Ocean, Land, Air
- Port:
- SHENZHEN
Your message must be between 20 to 2000 characters
Contact NowPlace of Origin: | China |
---|---|
Productivity: | 1000000000 pcs/week |
Supply Ability: | 7000000000 pcs/week |
Payment Type: | T/T,Paypal,Western Union |
Incoterm: | FOB,EXW,FCA |
Certificate: | GB/T19001-2008/ISO9001:2008 |
HS Code: | 8541401000 |
Transportation: | Ocean,Land,Air |
Port: | SHENZHEN |
Shenzhen Best LED Opto-electronic Co.,Ltd specialize in the production of two chips 660nm and 905nm,660nm and 880nm,660nm and 905nm,660nm and 940nm,870nm and 660nm lighting diode for oxygen analyzer, oxygen probe, oxygen saturation tester, oxygen saturation testing equipment. All the products is made by high quality raw material which can make sure the stable performance. Other LED with special wavelength are also available in Best LED factory and all the products can meet REACH,ROHS,ISO9001 standards. 3528FIRC-87L/14I100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, white clear tinted plastic packages.In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. These emitters are ideally suitable as high performance replacements of standard emitters.For those visible color's LED, usually, we measure the brightness with mcd. But for all of the IR LED, the unit will be change to mw/sr. Light intensity measured in mW/cm² is a more appropriate parameter. Because The depth that the light needs to penetrate depends on whether the product is tackling surface tissue wounds or deep muscle treatment, which will also be significant factors in the choice of LEDs in terms of wavelength, energy, and power. 880nm LED is not a common infrared LED as 940nm LED or 850nm LED. It's found that 880 nm LEDs might can help for musculoskeletal injuries sustained in training. As you know, shenzhen Best LED opto-electroinc co.,ltd is a skilled LED manufacturer, which can package this 880nm bare die with different case. such as: 3528 SMD LED case,5050 SMD LED case, 2835 SMD LED case or other through-hole LED case, 3mm through-hole LED case or 5mm through-hole LED case ect. Browse our website, if you cannot find the one that can meet your requirement. Just feel free to contact us for more detail.
- Size: 3.5*2.8*1.9mm - Chip Number: 1 chip - Color: 870nm - Type: Surface mount device - Chip brand: Tyntek |
- Mark Anode - Different color are available - Different wavelength are available - Warranty: 5 Years - RoHS, REACH, EN62471 |
- Uniform light output - Long life-solid state reliability - Low Power consumption -Anti UV epoxy resin package -High temperature resistance |
-Dimension Parameters-
These SMD LED case are also available for IR LED, UV LED, Blue SMD LED, Red SMD LED, Amber LED ect
- Emitting Color -
*Colors in the photo was took by camera, please take actual emitting color as standard.
- Electrical Parameters -
Absolute Maximum Ratings At Ta=25℃
Absolute Maximum Ratings At Ta=25℃
Parameter
Symbol
Rating
Power Dissipation
Pd
230mW
Pulse Forward Current
IFP
350mA
Forward Current
IF
100mA
Reverse Voltage
VR
5V
Junction Temperature
Tj
115°C
Operating Tempertature
Topr
-40 - +80°C
Storage Tempertature
Tstg
-40 - +100°C
Soldering Temperature
Tsol
260°C
Electro-Static-Discharge(HBM)
ESD
2000v
Warranty
Time
5Years
Antistatic bag
Piece
2000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C
Optical and Electrical Characteristics( Tc=25℃)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Forward Voltage
VF
1.7
2.4
V
IF=100mA
Pulse Forward Voltage
VF
2.8
V
IFP=350mA
Radiant Intensity
IE
30
45
mw/sr
IF=100mA
Peak Wavelength
λP
860
870
875
nm
IF=100mA
Total Radiated Power
PO
4.6
mw
IF=100mA
Half Width
Dl
50
nm
IF=100mA
Viewing Half Angle
2q1/2
±60
deg
IF=100mA
Reverse Current
IR
5
uA
VR=5V
Rise Time
Tr
25
ns
IF=100mA
Fall Time
Tf
13
ns
IF=100mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.
- 870nm LED -
Parameter
Symbol
Rating
Power Dissipation
Pd
230mW
Pulse Forward Current
IFP
350mA
Forward Current
IF
100mA
Reverse Voltage
VR
5V
Junction Temperature
Tj
115°C
Operating Tempertature
Topr
-40 - +80°C
Storage Tempertature
Tstg
-40 - +100°C
Soldering Temperature
Tsol
260°C
Electro-Static-Discharge(HBM)
ESD
2000v
Warranty
Time
5Years
Antistatic bag
Piece
2000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Forward Voltage
VF
1.7
2.4
V
IF=100mA
Pulse Forward Voltage
VF
2.8
V
IFP=350mA
Radiant Intensity
IE
30
45
mw/sr
IF=100mA
Peak Wavelength
λP
860
870
875
nm
IF=100mA
Total Radiated Power
PO
4.6
mw
IF=100mA
Half Width
Dl
50
nm
IF=100mA
Viewing Half Angle
2q1/2
±60
deg
IF=100mA
Reverse Current
IR
5
uA
VR=5V
Rise Time
Tr
25
ns
IF=100mA
Fall Time
Tf
13
ns
IF=100mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.
- Golden Wire Connection -

* In order to keep every one of LED's long lifespan, BestLED factory use high pure gold wire for inside circuit connection
- Packing -

*We package it with vacuum packing after tape it as a reel
- Application -
- Related LED -

- Production -
- Use -
