
800nm Infrared Emitter 3528 SMD LED Packaged
- Min. Order:
- 5000 Piece/Pieces
- Min. Order:
- 5000 Piece/Pieces
- Transportation:
- Ocean, Land, Air
- Port:
- SHENZHEN
Your message must be between 20 to 2000 characters
Contact NowPlace of Origin: | China |
---|---|
Productivity: | 1000000000 pcs/week |
Supply Ability: | 7000000000 pcs/week |
Payment Type: | T/T,Paypal |
Incoterm: | FOB,EXW,FCA |
Certificate: | GB/T19001-2008/ISO9001:2008 |
HS Code: | 8541401000 |
Transportation: | Ocean,Land,Air |
Port: | SHENZHEN |
3528FIRC-80L/14I100
800nm LED, 810nm LED and 805nm LED are actually in the same range of wavelength. 800nm infrared LED is a infrared LED that can emits red spot light when it's working. InBest LED factory, IR series includes: 660nm 680nm 690nm 700nm 730nm 740nm 750nm 760nm 770nm 780nm 800nm 810nm 830nm 850nm 870nm 880nm 890nm 900nm 905nm 940nm 950nm 970nm 980nm 1000nm 1020nm 1050nm 1200nm 1300nm 1550nm ect. This 3528FIRC-80L/14I100 is a high efficiency infrared emitting diode base on GaAlAs on GaAs material, molded in clear, white clear tinted plastic packages.In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. These emitters are ideally suitable as high performance replacements of standard emitters. Because of the high temperature performance and stability, these IR LED are popular in LED market.
- Size: 3.5*2.8*1.9mm - Chip Number: 1 chips - Color: 800nm LED - Type: Surface mount device - Chip brand: tyntek |
- Different color are available - Different wavelength are available - Warranty: 5 Years - RoHS, REACH, EN62471 |
- Uniform light output - Long life-solid state reliability - Low Power consumption -Anti UV epoxy resin package -High temperature resistance |
-Dimension Parameters -
These SMD LED case are also available for IR LED, UV LED, Blue SMD LED, Red SMD LED, Amber LED ect.
-Emitting Color-

-Electrical Parameters-
Absolute Maximum Ratings At Ta=25℃
Parameter
Symbol
Rating
Power Dissipation
Pd
250mW
Pulse Forward Current
IFP
350mA
Forward Current
IF
100mA
Reverse Voltage
VR
5V
Junction Temperature
Tj
115°C
Operating Tempertature
Topr
-40 - +80°C
Storage Tempertature
Tstg
-40 - +100°C
Soldering Temperature
Tsol
260°C
Electro-Static-Discharge(HBM)
ESD
2000v
Warranty
Time
5Years
Antistatic bag
Piece
4000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C
Optical and Electrical Characteristics( Tc=25℃)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Forward Voltage
VF
1.7
2.5
V
IF=100mA
Pulse Forward Voltage
VF
2.9
V
IFP=350mA
Radiant Intensity
IE
40
60
mw/sr
IF=100mA
Peak Wavelength
λP
800
805
810
nm
IF=100mA
Total Radiated Power
PO
4.8
mw
IF=100mA
Half Width
Dl
50
nm
IF=100mA
Viewing Half Angle
2q1/2
±60
deg
IF=100mA
Reverse Current
IR
5
uA
VR=5V
Rise Time
Tr
25
ns
IF=100mA
Fall Time
Tf
13
ns
IF=100mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.
- 800nm LED -

-Golden Wire Connection-

Absolute Maximum Ratings At Ta=25℃
Parameter
Symbol
Rating
Power Dissipation
Pd
250mW
Pulse Forward Current
IFP
350mA
Forward Current
IF
100mA
Reverse Voltage
VR
5V
Junction Temperature
Tj
115°C
Operating Tempertature
Topr
-40 - +80°C
Storage Tempertature
Tstg
-40 - +100°C
Soldering Temperature
Tsol
260°C
Electro-Static-Discharge(HBM)
ESD
2000v
Warranty
Time
5Years
Antistatic bag
Piece
4000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Forward Voltage
VF
1.7
2.5
V
IF=100mA
Pulse Forward Voltage
VF
2.9
V
IFP=350mA
Radiant Intensity
IE
40
60
mw/sr
IF=100mA
Peak Wavelength
λP
800
805
810
nm
IF=100mA
Total Radiated Power
PO
4.8
mw
IF=100mA
Half Width
Dl
50
nm
IF=100mA
Viewing Half Angle
2q1/2
±60
deg
IF=100mA
Reverse Current
IR
5
uA
VR=5V
Rise Time
Tr
25
ns
IF=100mA
Fall Time
Tf
13
ns
IF=100mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.


* In order to keep every one of LED's long lifespan, BestLED factory use high pure gold wire for inside circuit connection
- Packing -
*We package it with vacuum packing after tape it as a reel
-Application-
- Related LED -
- Use -
