1w 10mm 940nm high power infrared diode

1w 10mm 940nm high power infrared  diode      Package Dimensions:               Absolute Maximum Rating                  (Ta=25°C)

Item	Symbol	Value	Unit
DC forward current	IF	350	mA
Pulse forward current	IFP	1000	mA
Power dissipation	PD	700	mW
Operating temperature	Topr	-20~+75	°C
Storage temperature	Ystg	-30~+80	°C
Reverse voltage	VR	5	V
Sold soldering temperature	Tsol	260°C/3Sec(*1)	---

(*1)SMT solder ability only for Silicone materials len,   if  PC  len  Manual welding get better (*2)Plus with Max 10ms,duty ratio max1/10     n Initial Electrical/Optical Characteristics                                (Ta=25°C)

Item	Symbol	condition	Min	Type	Max	Unit
DC forward Voltage	VF	I=350mA	1.25	1.3	1.45	V
DC reverse Current	IR	V=5V	----	----	10	μA
Peak wavelength	λ	I=350mA		940		nm
Spectrum Radiation Bandwidth	Δλ	I=350mA	----	50	----	Nm
Power  output	IV	I=350mA		40	312	mW
50%Power Angle	2θ1/2	I=350mA	----	30	----	deg

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