Transistors for Amplifier Applications and General Purpose

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Basic Info

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Product Description

Features:

Low Collector -emitter saturation voltage

VCE(sat)=1.0v (Max)@ IC=-3A,IB=-0.3A

DC current Gain

hFE =60-200@ IC=0.5A

Complementary to NPN 2SD880

MAXIMUM RATINGS (TA=25C unless otherwise noted)

Symbol parameter value units

VCBO collector- base voltage -60 V

VCEO collector-emitter voltage -60 V

VEBO emitter-base Voltage -7 V

IC collector current -continuous -3 A

PC collector power dissipation 1.5 W

TJ junction temperature: 150 deg. C

Tstg Storage Temperature -55 to 150 deg. C

ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwisespecified)

Parameter symbol test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -60V

Collector-emitter breakdown voltage V(BR)CEO IC =-50mA, IB=0-60 V

Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -7 V

Collector cut-off current ICBO VCB=-60V, IE=0-100¼A

Emitter cut-off current IEBO VEB=-7V, IC=0 -100¼A

hFE(1) x VCE=-5V, IC=-500mA 60 200

DC current gain

hFE(2) x VCE=-5V,IC=-3A 20

Collector-emitter saturation voltage VCE(sat) x IC=-3A,IB=-0.3A -1V

Base-emitter voltage VBE x VCE=-5V,IC=-500mA -1 V

Transition frequency fT VCE=-5V, IC=-500mA, f=1MHz 9MHz

Turn-on time ton 0.4¼s

Storage time tstg 1.7¼s

Turn-off time toff

VCC=-30V,Ic=-2A,

IB!=IB2=-0.2A

0.5 ¼s

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