Liheng Industry (HK) Limited
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Liheng Industry (HK) Limited
Transistor for Amplifier Applications and General Purpose
  • Transistor for Amplifier Applications and General Purpose
Transistor for Amplifier Applications and General Purpose

Transistor for Amplifier Applications and General Purpose

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Basic Info
Basic Info
Payment Type: Telegraphic Transfer (TT,T/T)
Product Description
Product Description
  • Features:
    • Low collector -emitter saturation voltage
    • VCE(sat)=1.0v (max.) IC=-3A,IB=-0.3A
    • DC current gain
    • hFE =60-200 IC=0.5A
    • Complementary to NPN 2SD880
  • Maximum ratings (TA=25C unless otherwise noted):
    • Symbol parameter value units
    • VCBO collector:
      Base voltage: 60V
    • VCEO collector:
      Emitter voltage: 60V
    • VEBO emitter:
      Base voltage: 7V
    • IC collector current:
      Continuous: 3A
    • PC collector power dissipation: 1.5W
    • TJ junction temperature: 150°C
    • Tstg storage temperature -55 to 150°C
  • Low collector -emitter saturation voltage
  • VCE(sat)=1.0v (max.) IC=-3A,IB=-0.3A
  • DC current gain
  • hFE =60-200 IC=0.5A
  • Complementary to NPN 2SD880
  • Symbol parameter value units
  • VCBO collector:
    Base voltage: 60V
  • VCEO collector:
    Emitter voltage: 60V
  • VEBO emitter:
    Base voltage: 7V
  • IC collector current:
    Continuous: 3A
  • PC collector power dissipation: 1.5W
  • TJ junction temperature: 150°C
  • Tstg storage temperature -55 to 150°C
  • Electrical characteristics (Tamb=25C unless otherwisespecified):
  • Parameter symbol test conditions: MIN TYP MAX UNIT
  • Collector-base breakdown voltage: V (BR)CBO IC=-1mA, IE=0 -60V
  • Collector-emitter breakdown voltage: V (BR)CEO IC =-50mA, IB=0-60 V
  • Emitter-base breakdown voltage: V( BR)EBO IE=-1mA,IC=0 -7V
  • Collector cut-off current: ICBO VCB=-60V,IE=0 -100¼A
  • Emitter cut-off current: IEBO VEB=-7V,IC=0 -100 ¼A
  • hFE(1) x VCE=-5V, IC=-500mA 60 200
  • DC current gain
  • hFE(2) x VCE=-5V, IC=-3A 20
  • Collector-emitter saturation voltage VCE(sat) x IC=-3A,IB=-0.3A -1 V
  • Base-emitter voltage VBE x VCE=-5V,IC=-500mA -1 V
  • Transition frequency fT VCE=-5V,IC=-500mA, f=1MHz 9MHz
  • Turn-on time ton 0.4¼s
  • Storage Ttme tstg 1.7¼s
  • Turn-off time toff
  • VCC=-30V, Ic=-2A,
  • IB!=IB2=-0.2A
  • 0.5 ¼s
  • Pulse test
  • Classification of hFE(1)
  • Rank: O, Y
  • Range: 60-120, 100-200

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