
810nm LED Emitter 5mm DIP LED Blue Lens
- Min. Order:
- 5000 Piece/Pieces
- Min. Order:
- 5000 Piece/Pieces
- Transportation:
- Ocean, Land, Air
- Port:
- SHENZHEN
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Contact NowPlace of Origin: | China |
---|---|
Productivity: | 1000000000 pcs/week |
Supply Ability: | 7000000000 pcs/week |
Payment Type: | T/T,Paypal,Western Union |
Incoterm: | FOB,EXW,FCA |
Certificate: | GB/T19001-2008/ISO9001:2008 |
HS Code: | 8541401000 |
Transportation: | Ocean,Land,Air |
Port: | SHENZHEN |
- Size: 5.0*H8.7mm - Chip Number:1 chips - Color: 810nm - Type: Blue clear - Chip brand: Tyntek |
- Different color are available - Different wavelength are available
- Warranty: 5 Years
- RoHS, REACH, EN62471 |
- Uniform light output - Long life-solid state reliability
- Low Power consumption
-Anti UV epoxy resin package -High temperature resistance |
- Size of 5mm IR Through-hole LED -
- Through-hole IR LED Radiant -
*Colors in the photo was took by camera, please take actual emitting color as standard.
- Through-hole IR LED Parameter -
Absolute Maximum Ratings At Ta=25℃
Parameter
Symbol
Rating
Power Dissipation
Pd
220mw
Pulse Forward Current
IFP
1000mA
Forward Current
IF
150mA
Reverse Voltage
VR
5V
Junction Temperature
Tj
115°C
Operating Tempertature
Topr
-40 - +80°C
Storage Tempertature
Tstg
-40 - +100°C
Soldering Temperature
Tsol
260°C
Electro-Static-Discharge(HBM)
ESD
3000v
Warranty
Time
5Years
Antistatic bag
Piece
1000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C
Optical and Electrical Characteristics( Tc=25℃)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Forward Voltage
VF
1.4
1.6
1.8
V
IF=50mA
1.6
1.8
2.0
V
IF=100mA
2.5
V
IF=1000mA
Rediant Intensitye
Ee
27
mw/sr
IF=50mA
40
60
mw/sr
IF=100mA
510
mw/sr
IF=1000mA
Luminous Power
PO
50
mw
IF=50mA
80
mw
IF=100mA
800
mw
IF=1000mA
Peak Wavelength
λP
800
805
810
nm
IF=100mA
Half Width
Dl
25
nm
IF=100mA
Viewing Half Angle
2q1/2
±22
deg
IF=100mA
Reverse Current
IR
5
uA
VR=5V
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.
Parameter
Symbol
Rating
Power Dissipation
Pd
220mw
Pulse Forward Current
IFP
1000mA
Forward Current
IF
150mA
Reverse Voltage
VR
5V
Junction Temperature
Tj
115°C
Operating Tempertature
Topr
-40 - +80°C
Storage Tempertature
Tstg
-40 - +100°C
Soldering Temperature
Tsol
260°C
Electro-Static-Discharge(HBM)
ESD
3000v
Warranty
Time
5Years
Antistatic bag
Piece
1000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Forward Voltage
VF
1.4
1.8
V
IF=50mA
V
V
Rediant Intensitye
Ee
27
mw/sr
IF=50mA
60
50
80
800
Peak Wavelength
λP
800
nm
IF=100mA
Half Width
Dl
25
nm
IF=100mA
Viewing Half Angle
2q1/2
±22
deg
IF=100mA
Reverse Current
IR
5
uA
VR=5V
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.
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