
IR Phototransistor Through Hole 2-Pin Package
- Min. Order:
- 5000 Piece/Pieces
- Min. Order:
- 5000 Piece/Pieces
- Transportation:
- Ocean, Land, Air
- Port:
- SHENZHEN
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Contact NowPlace of Origin: | China |
---|---|
Productivity: | 1000000000 pcs/week |
Supply Ability: | 7000000000 pcs/week |
Payment Type: | T/T,Paypal |
Incoterm: | FOB,EXW,FCA |
Certificate: | GB/T19001-2008/ISO9001:2008 |
HS Code: | 8541401000 |
Transportation: | Ocean,Land,Air |
Port: | SHENZHEN |
IR Receiver 3162PT850D-A3
What is the difference between the performance of photodiodes and phototransistors?
1. Phototransistor can be considered as the integrated structure of photodiode and transistor. Its characteristics are the output characteristics of photodiode and the characteristics of transistor.
2. Photodiodes can be used as voltage or current sources (i.e. photovoltaic cells) without additional power supply.
3. The phototransistor must be operated with an external power supply, so that it can output much larger current than the photodiode, because it has been amplified by the transistor.
- Size: - Chip Number: 1 chips - Color: 850nm - Type: Black clear - Chip brand: Tyntek |
- 60 degree - Different color are available - Different wavelength are available
- Warranty: 5 Years
- RoHS, REACH, EN62471 |
- Uniform light output - Long life-solid state reliability
- Low Power consumption
-Anti UV epoxy resin package -High temperature resistance |
- Size of 3mm IR Through-hole LED -
*This case are also available for other LED, such as: 5mm green through-hole LED, UV LED, 660nm LED, 940nm LED, 5mm blue through-hole LED, yellow LED, amber LED ect*
- Working Through-hole IR LED -
*Colors in the photo was took by camera, please take actual emitting color as standard.
- Through-hole IR LED Parameter -
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Emitter Voltage
VCEO
30
V
Emitter-Collector Voltage
VECO
5
V
Collector Dark Current
ICEO
100
nA
VCE=20V
Ee=0mw/cm2
Collector-Emitter
Breakdown Voltage
Bvceo
30
100
V
ICBO=100uA
Ee=0mw/cm2
Emitter-Collector
Breakdown Voltage
Bvceo
6
V
IECO=10uA
Collector-Emitter
Saturation Voltage
VCE(sat)
0.4
V
IC=2mA
IB=100uA
Ee=1mw/cm2
Photocurrent 1
IPCE
30
90
uA
Vce=5V
Ee=1mw/cm2
λP=850nm
Photocurrent 2
IPCE
90
270
uA
VCE=5V
Ee=1mw/cm2
λP=940nm
Current gain
hFE
270
900
uA
VCE=5V
IC=2mA
Wavelenghth of Peak Sensitivity
λP
850
nm
Range of Spectral Bandwidth
λ0.5
400
1100
nm
Response Time-Rise Time
tR
15
us
Vce=5v
Ic=1mA
RL=1000Ω
Response Time-Fall Time
tF
15
us
Half Sensitivity angle
△λ
±10
deg
Collector-base Capacitance
CCB
8
PF
F=1MHz,VCB=3V
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Test Condition |
Collector-Emitter Voltage |
VCEO |
|
|
30 | V |
|
Emitter-Collector Voltage |
VECO |
|
|
5 | V |
|
Collector Dark Current |
ICEO |
|
100 |
nA |
VCE=20V Ee=0mw/cm2 |
|
Collector-Emitter Breakdown Voltage |
Bvceo |
30 |
100 |
V |
ICBO=100uA Ee=0mw/cm2 |
|
Emitter-Collector Breakdown Voltage |
Bvceo |
6 |
|
V |
IECO=10uA |
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
|
0.4 |
V |
IC=2mA IB=100uA Ee=1mw/cm2 |
|
Photocurrent 1 |
IPCE |
30 |
|
90 |
uA |
Vce=5V Ee=1mw/cm2
λP=850nm |
Photocurrent 2 |
IPCE | 90 |
|
270 | uA |
VCE=5V Ee=1mw/cm2 λP=940nm |
Current gain |
hFE |
270 |
|
900 |
uA |
VCE=5V IC=2mA |
Wavelenghth of Peak Sensitivity |
λP | 850 |
|
nm |
|
|
Range of Spectral Bandwidth |
λ0.5 |
400 |
|
1100 |
nm |
|
Response Time-Rise Time |
tR |
15 |
us |
Vce=5v Ic=1mA
RL=1000Ω |
||
Response Time-Fall Time |
tF |
|
15 |
|
us | |
Half Sensitivity angle |
△λ |
|
±10 |
|
deg |
|
Collector-base Capacitance |
CCB |
|
|
8 | PF | F=1MHz,VCB=3V |
- Golden wire connection -
* In order to keep every one of LED's long lifespan, BestLED factory use high pure gold wire for inside circuit connection
- IR LED Packing -
*We can pack this LED with any number of packages and taped or bend the LED pins as your requirement.
- Related Infrared LED -
- Production Process -
- Through-hole IR LED -
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