High Power SMT 850nm Infrared LED Emitter 3W

High Power SMT 850nm Infrared LED Emitter 3W

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Min. Order:: 5000 Piece/Pieces

Min. Order:: 5000 Piece/Pieces

Transportation:: Ocean, Land, Air

Port:: SHENZHEN

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Basic Info

Place of Origin:	China
Productivity:	1000000000 pcs/week
Supply Ability:	7000000000 pcs/week
Payment Type:	T/T,Paypal
Incoterm:	FOB,EXW,FCA
Certificate:	GB/T19001-2008/ISO9001:2008
HS Code:	8541401000
Transportation:	Ocean,Land,Air
Port:	SHENZHEN

Product Description

- High Power IR LED -

3535FIRC-85L42I1A-ES

Is it those small power IR LED cannot meet your requirement? We package this high power IR LED with 3535 SMD LED case. With this case, we can package it with big size LED chip so that it can handle more current. Max working current can reach 1000mA. These 3W IR LED 850nm are widely used in night vision camera, IR control system or some night vision system. There are red explosion products using 850 nm infrared LED emission tube, in use, close observation, infrared lamp will emit dark red light. Do you need some high power 850nm IR LED emitter for your project? Contact us for more detail~

850nm LED 3535 SMT LED

- Size: 3.5*3.5*2mm

- Chip Number: 1 chip

- Color: 850nm LED

- Type: Surface mount device

- Chip brand: Epistar

- Polarity Mark

- Different color are available

- Different wavelength are available

- Warranty: 5 Years

- RoHS, REACH, EN62471

- Uniform light output

- Long life-solid state reliability

- Low Power consumption

-Anti UV epoxy resin package

-High temperature resistance

-Dimension Parameters -

3535 SMD LED Size

These SMD LED case are also available for IR LED, UV LED, Blue SMD LED, Red SMD LED, Amber LED ect.

- Emitting Color -

SMD 3535 IR 850nm 3W

*Colors in the photo was took by camera, please take actual emitting color as standard.

- Electrical Parameters -

Parameter

Symbol

Rating

Power Dissipation

Pd

3W

Pulse Forward Current

IFP

5A

Forward Current

IF

1A

Reverse Voltage

VR

5V

Junction Temperature

Tj

115°C

Operating Temperature

Topr

-40 - +80°C

Storage Temperature

Tstg

-40 - +100°C

Soldering Temperature

Tsol

260°C

Electro-Static-Discharge(HBM)

ESD

2000v

Warranty

Time

5Years

Packing

Piece

1000Back

*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.

*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Forward Voltage

VF

1.5

2.2

V

IF=350mA

2

3

IF=1000mA

≤4

IF=5A

Radiant Intensity

Ee

350



450

mw/sr

IF=1000mA

450

650

500

800

Peak Wavelength

λP

840

850

860

nm

IF=1000mA

Half Width

Dl



25



nm

IF=1000mA

Viewing Half Angle

2q1/2



±60



deg

IF=1000mA

Reverse Current

IR





5

uA

VR=5V

*Luminous Intensity is measured by ZWL600.

*2q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

- Golden Wire Connection -

* In order to keep every one of LED's long lifespan, BestLED factory use high pure gold wire for inside circuit connection

- Packing -

*We package it with vacuum packing after tape it as a reel

- Application -

- Related Infrared LED Lamps -

Infrared LED - SMD LED

- Production -

- SMD LED Use of Attention-

SMD LED Use of attention

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Related Keywords

SMT 850nm Infrared LED , 850nm Infrared LED Emitter , High Power SMT 850nm Infrared LED

Parameter	Symbol	Rating
Power Dissipation	Pd	3W
Pulse Forward Current	IFP	5A
Forward Current	IF	1A
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Temperature	Topr	-40 - +80°C
Storage Temperature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	2000v
Warranty	Time	5Years
Packing	Piece	1000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	1.5		2.2	V	IF=350mA
		2		3		IF=1000mA
				≤4		IF=5A
Radiant Intensity	Ee	350		450	mw/sr	IF=1000mA
		450		650
		500		800
Peak Wavelength	λP	840	850	860	nm	IF=1000mA
Half Width	Dl		25		nm	IF=1000mA
Viewing Half Angle	2q1/2		±60		deg	IF=1000mA
Reverse Current	IR			5	uA	VR=5V
*Luminous Intensity is measured by ZWL600.
*2q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.