isolating heat sink 96% alumina ceramic wafer

isolating heat sink 96% alumina ceramic wafer

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Alumina Ceramics:

The alumina electronic ceramic substrate is an electronic ceramic substrate obtained by sintering an appropriate amount of mineral raw material in a 96% to 99% alumina ceramic material. Currently commonly used molding methods include: casting, dry pressing, grouting, extrusion molding, and the like. Among them, the casting method is technically new compared with the traditional ceramic molding method, and is an important molding process of the thin ceramic material. Then, after the blanked blank is punched, an alumina substrate having a relatively smooth surface can be obtained according to an appropriate debinding and firing process. Common sintering methods include: 1) hot pressing sintering; 2) hot isostatic pressing Pressure sintering method; 3) microwave heating sintering method; 4) microwave plasma sintering method; 5) discharge plasma sintering method, and the like. However, due to the large grain size and porosity of alumina ceramics, mechanical polishing does not fundamentally change the micron-scale voids or defects of the ceramic surface, and the existence of these voids and defects also limits the alumina ceramic substrate as a film. Some applications of the substrate. Therefore, researchers have also surface treated alumina ceramic substrates by preparing a layer of glass glaze on the surface of the substrate. However, with the further increase in the demand for electronic ceramics in the market, alumina ceramic electronic substrates with high dimensional accuracy, shape accuracy and low surface roughness will continue to be reused, thus realizing the surface of alumina ceramic substrates. Smooth planarization is the key and development trend of substrate substrate material preparation technology.

High hardness, high strength, wear resistance, corrosion resistance, high temperacture (1600°), good thermal diffusivity, good insulativity, low cost etc. 

Data Sheet↓

Thermal Shock Resistance: 200 △T°C

Maximum use temperature 1650°C

Dielectric Strength: ＞10 KV/mm

Dielectric Constant: 9.1er

Dielectric Loss Angle(1MHz): 0.0002-0.0003

Volume Resistivity(20°C): ＞1014Ω.cm

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