50mW TO56 520nm IR Laser Diode Semiconductor Manufacturing

50mW TO56 520nm IR Laser Diode Semiconductor Manufacturing

$2.56

10-999 piece
$2.23

1000-4999 piece
$1.35

≥5000 piece

Min. Order:: 1 piece

Min. Order:: 1 piece

Quantity:

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Basic Info

Payment Type:	Western Union,T/T

Product Description

Wholesale Semiconductor Sensor 50mW TO56 520nm Laser Diode

We offer high-quality 30W/50W 520nm TO56 Laser Diodes at competitive prices. With years of specialization in Diode Laser technology, we have successfully served clients across Europe and the Americas. We are eager to establish a long-term partnership with you in China.

Features

Ø Type emission wavelength 520nm

Ø Efficient radiation source for cw and pulsed

Ø Operation

Ø Single transverse mode semiconductor laser

Ø High modulation bandwidth

Ø Miniaturized TO56 ICut package

Ø Laser diode isolated against package

Manufacture Semiconductor 50mW TO56 520nm IR Laser Diode

Application

Ø Laser projection

Ø Instrumentation

Ø Biomedical Applications

Ø Holography

Ø Metro logy

Data:

Absolute Maximum Ratings at TA = 25℃

Parameter	Symbol	Rating	Unit	Notice
Total Power dissipation	P_tot	1.5	mW
Power Dissipation	P_d	20	mW
Average Forward Current	I_F	10	mA	max
Forward Current	F_c	10	mA	max
Lead Soldering Temperature	T_sol	260	℃	4mm from mold body less than 5 seconds
Operating Temperature	T_opr	-25 ~+85	℃
Storage Temperature	T_stg	-40 ~ +85	℃

Electronic Optical Characteristics : (Ta=25℃) Electronic Optical Characteristics : (Ta=25℃)

Parameter Rang of Spectral	Symbol	Min.	Typ.	Max.	Unit	Condition
Bandwidth	λ0.5	----	850	----	nm	V R =0 V
Wavelength of Peak Sensitivity	λp	----	1300	----	V R =0 V	V R =0 V
Sensitivity range at 20%	λ_min λ_max	800		1700	nm	V R =0 V
Total Capacitance	Ct	----	1100	1250	pF	F=1MHz VR=0V
	450	550	pF	F=1MHz VR=-5V
Rise/Fall Time	tr/tf	---	17	----	nS	RL=100 VR=1.5V
Breakdown voltage	V_R		50		V	I r =10 µA
Dark current	Id		10	20	nA	V_R=-5 V@25 ℃
Shunt resistance	R_SH		5	20	M	V R =-10 mV
Noise equivalent power	N_EP		4.5x10^-12		w/√Hz	λ = 1300 nm V=0V f=1MHz
Responsivity	R_PT		0.8	0.95	^A/W	λ = 1300 nm V=0V
	0.95	1.05	^A/W	λ = 1550 nm V=0V
dB Bandwidth*	_BW		4.5	6	MHz	VR=-0.5V, 50Q
Saturation Power	_SP		1.5	3.0	mW	λ = 1300 nm V=0V,-0.2dB