5050 SMD 850NM Infrared diode

  5050 SMD 850NM Infrared  diode      Package size :               Absolute Maximum Rating              (Ta=25°C)

Item	Symbol	Value	Unit
DC forward current	IF	150	mA
Pulse forward current	IFP	1000	A
Power dissipation	PD	650	mW
Operating temperature	Topr	-40~+85	°C
Storage temperature	Ystg	-40~+80	°C
Reverse voltage	VR	5	V
Sold soldering temperature	Tsol	260°C/3Sec	---

Plus with Max 10ms,duty ratio max1/10     n Initial Electrical/Optical Characteristics                                (Ta=25°C)

Item	Symbol	condition	Min	Type	Max	Unit
DC forward Voltage	VF	I=60mA	----	1.42	1.55	V
		IF=2100mA,tp=100μs,tp/T=0.01	----	1.65	2.2
		IF=2.00A,tp=100μs,tp/T=0.01	----	3.	4.25
DC reverse Current	IR	V=5V	----	----	20	μA
Dome Wavelength	WD	I=60mA	----	850	-	Nm
Spectrum Radiation Bandwidth	Δλ	I=60mA	----	45	----	nm
Luminous Intensity	Ee	I=60mA	4	9	----	MW/sr
		IF=100mA,tp=100μs, tp/T=0.01		30
		IF=1.00A,tp=100μs, tp/T=0.01		420
50%Power Angle	2θ1/2	I=60mA	----	120	----	deg

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