GSM SIM Card, Made of ABS/PVC Material, 256 Bytes Inner RAM and High Performance IC

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Basic Info

Payment Type:	Telegraphic Transfer in Advance (Advance TT, T/T)

Product Description

Specifications:

High performance IC
Used in smart card
Body materials: ABS or PVC
CPU: 8 bits
Memorizer (32KB):
- 256 bytes inner RAM (256 x 8-bit SRAM)
- 1KB outer RAM (1,024 x 8-bit SRAM)
- 48KB program memorizer (48KB x 8-bit ROM)
- 32KB data memorizer (32KB x 8-bit EEPROM)
EEPROM (32KB):
- 32KB EEPROM as data memorizer
- Single byte read, write and wipe
- Multiple bytes storage (1 byte to 1 page)
- Program clock come from vibrate clock that is generated by chipitself
- At normal temperatures, can proceed at least 100,000 timeserase and write operations
- Data endurance more than ten years
- Program voltage generated in the chip
Serial I/O interfaces:
- Match IEC-7816
- Asynchronous half-duplex transmission protocol
- Two kinds of transmission velocity (372/1 and 512/8)optional
- Randomizer: 8 bits
- Power on reset: internal mechanism
- Low power work modes: sleep and clock stop
- Safety mechanisms: abnormal voltage/frequency detectionfunction and DPA/SPS attacking immunity
Working temperatures: -25 to 70°C
Working voltages: 2.7 to 3.3 and 4.5 to 5.5V
Working frequencies: 1 to 5MHz (3.57MHz)
Can be used in the Agilent 8960 and others to test set whenrunning any GSM test or lab application

Benefits:

UMTS security variables within the SIM match the defaultsettings of the GSM test and lab applications
Set-up time is reduced because the SIM is configured with thesame default IMSI and PLMN values broadcast from the test set
For dual mode testing, GSM speech loop-back is supported forGSM bit error ratio (BER) measurements

High performance IC

Used in smart card

Body materials: ABS or PVC

CPU: 8 bits

Memorizer (32KB):

EEPROM (32KB):

32KB EEPROM as data memorizer
Single byte read, write and wipe
Multiple bytes storage (1 byte to 1 page)
Program clock come from vibrate clock that is generated by chipitself
At normal temperatures, can proceed at least 100,000 timeserase and write operations
Data endurance more than ten years
Program voltage generated in the chip

Serial I/O interfaces:

Match IEC-7816
Asynchronous half-duplex transmission protocol
Two kinds of transmission velocity (372/1 and 512/8)optional
Randomizer: 8 bits
Power on reset: internal mechanism
Low power work modes: sleep and clock stop
Safety mechanisms: abnormal voltage/frequency detectionfunction and DPA/SPS attacking immunity

Working temperatures: -25 to 70°C

Working voltages: 2.7 to 3.3 and 4.5 to 5.5V

Working frequencies: 1 to 5MHz (3.57MHz)

Can be used in the Agilent 8960 and others to test set whenrunning any GSM test or lab application

256 bytes inner RAM (256 x 8-bit SRAM)

1KB outer RAM (1,024 x 8-bit SRAM)

48KB program memorizer (48KB x 8-bit ROM)

32KB data memorizer (32KB x 8-bit EEPROM)

32KB EEPROM as data memorizer

Single byte read, write and wipe

Multiple bytes storage (1 byte to 1 page)

Program clock come from vibrate clock that is generated by chipitself