Phone Card with 1 to 5MHz Working Frequency and -25 to 70 Degrees Celsius Working Temperature

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Basic Info

Payment Type:	Telegraphic Transfer in Advance (Advance TT, T/T)

Product Description

Specifications:

High performance IC
Used in smart card
Body material: ABS or PVC
CPU: 8 bits
Memorizer (32KB):
- 256 bytes inner RAM (256 x 8-bit SRAM)
- 1KB outer RAM (1,024 x 8-bit SRAM)
- 48KB program memorizer (48KB x 8-bit ROM)
- 32KB data memorizer (32KB x 8-bit EEPROM)
EEPROM (32KB):
- 32KB EEPROM as data memorizer
- Single byte read, write and wipe
- Multi-bytes storage (1 byte to 1 page)
- Program clock come from vibrate clock that generated by chipitself
- At the normal temperature, can precede at least 100,000 timeserase and write operating
- EEPROM data endurance more than ten years
- EEPROM program voltage generated in the chip
Serial I/O interface:
- With IEC-7816 marks
- Asynchronous half-duplex transmission protocol
- Two kinds of transmission velocity (372/1 and 512/8)(optional)
Randomizer: 8 bits
Power on reset: internal power on reset mechanism
Low power work mode: sleep and clock stop
Safety mechanism: abnormal voltage/frequency detection functionand DPA/SPS attacking immunity
Working temperature: -25 to 70°C
Working voltage: 2.7 to 3.3V and 4.5 to 5.5V
Working frequency: 1 to 5MHz (3.57MHz)
Can be used in the agilent 8960 and others to test set whenrunning any GSM test or lab application

Advantages:

UMTS security variables within the SIM match the defaultsettings of the GSM test and lab applications
Set-up time is reduced because the SIM is configured with thesame default IMSI and PLMN values broadcast from the test set
For dual mode testing, GSM speech loop back is supported forGSM bit error ratio (BER) measurements

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High performance IC

Used in smart card

Body material: ABS or PVC

CPU: 8 bits

Memorizer (32KB):

256 bytes inner RAM (256 x 8-bit SRAM)
1KB outer RAM (1,024 x 8-bit SRAM)
48KB program memorizer (48KB x 8-bit ROM)
32KB data memorizer (32KB x 8-bit EEPROM)

EEPROM (32KB):

32KB EEPROM as data memorizer
Single byte read, write and wipe
Multi-bytes storage (1 byte to 1 page)
Program clock come from vibrate clock that generated by chipitself
At the normal temperature, can precede at least 100,000 timeserase and write operating
EEPROM data endurance more than ten years
EEPROM program voltage generated in the chip

Serial I/O interface: