
2.5G Test SIM Card with 8-bit CPU and High Performance IC, Made of ABS or PVC Body Material
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- Telegraphic Transfer in Advance (Advance TT, T/T)
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Basic Info
Payment Type: | Telegraphic Transfer in Advance (Advance TT, T/T) |
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Product Description
Product Description
- High performance IC
- Used in smart card
- Body material: ABS or PVC
- CPU: 8 bits
- Memory (32KB):
- 256 bytes inner RAM (256 x 8-bit SRAM)
- 1KB outer RAM (1,024 x 8-bit SRAM)
- 48KB program memory (48KB x 8-bit ROM)
- 32KB data memory (32KB x 8-bit EEPROM)
- EEPROM (32KB):
- 32KB EEPROM as data memory
- Single byte read, write and wipe
- Multi-bytes storage (1 byte to 1 page)
- Program clock come from vibrate clock that generated by chipitself
- At the normal temperature, can precede at least 100,000 timeserase and write operating
- EEPROM data endurance more than ten years
- EEPROM program voltage generated in the chip
- Serial I/O interface:
- With IEC-7816 marks
- Asynchronous half-duplex transmission protocol
- Two kinds of transmission velocity (372/1 and 512/8)(optional)
- Random: 8 bits
- Power on reset: internal power on reset mechanism
- Low power work mode: sleep and clock stop
- Safety mechanism: abnormal voltage, frequency detectionfunction and DPA/SPS attacking immunity
- Operating temperature: -25 to 70°C
- Operating voltage: 2.7 to 3.3V and 4.5 to 5.5V
- Operating frequency: 1 to 5MHz (3.57MHz)
- Can be used in the Agilent 8960 and others to test set whenrunning any GSM test or lab application
- UMTS security variables within the SIM match the defaultsettings of the GSM test and lab applications
- Set-up time is reduced because the SIM is configured with thesame default IMSI and PLMN values broadcast from the test set
- For dual mode testing, GSM speech loop back is supported forGSM bit error ratio (BER) measurements
- 256 bytes inner RAM (256 x 8-bit SRAM)
- 1KB outer RAM (1,024 x 8-bit SRAM)
- 48KB program memory (48KB x 8-bit ROM)
- 32KB data memory (32KB x 8-bit EEPROM)
- 32KB EEPROM as data memory
- Single byte read, write and wipe
- Multi-bytes storage (1 byte to 1 page)
- Program clock come from vibrate clock that generated by chipitself
- At the normal temperature, can precede at least 100,000 timeserase and write operating
- EEPROM data endurance more than ten years
- EEPROM program voltage generated in the chip
- With IEC-7816 marks
- Asynchronous half-duplex transmission protocol
- Two kinds of transmission velocity (372/1 and 512/8)(optional)
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