
Phone Card with Internal Power and Reset Mechanism, 1 to 5MHz Working Frequency
- Payment Type:
- Telegraphic Transfer in Advance (Advance TT, T/T)
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Basic Info
Payment Type: | Telegraphic Transfer in Advance (Advance TT, T/T) |
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Product Description
Product Description
- High-performance IC
- Used in smart cards
- Body material: ABS or PVC
- CPU: 8 bits
- Memorizer (32KB):
- 256 bytes inner RAM (256 x 8-bit SRAM)
- 1KB outer RAM (1,024 x 8-bit SRAM)
- 48KB program memorizer (48KB x 8-bit ROM)
- 32KB data memorizer (32KB x 8-bit EEPROM)
- EEPROM (32KB):
- 32KB EEPROM as data memorizer
- Single byte read, write and wipe
- Multi-byte storage (1 byte to 1 page)
- Program clock come from vibrate clock that generated by chipitself
- At the normal temperature, can proceed at least 100,000 timeserase and write operations
- EEPROM data endurance more than ten years
- EEPROM program voltage generated in the chip
- Serial I/O interface:
- Asynchronous half-duplex transmission protocol
- Two kinds of transmission velocity (372/1 and 512/8)optional
- Randomizer: 8 bits
- Power on reset: internal power on reset mechanism
- Low-power work mode: sleep and clock stop
- Safety mechanism: abnormal voltage/frequency detectionfunction, DPA/SPS attacking immunity
- Working temperature: -25 to 70°C
- Working voltage: 2.7 to 3.3, 4.5 to 5.5V
- Working frequency: 1 to 5MHz (3.57MHz)
- Can be used in the Agilent 8960 and others to test set whenrunning any GSM test or lab application
- Several benefits:
- UMTS security variables within the SIM match the defaultsettings of the GSM test and lab applications
- Set-up time is reduced because the SIM is configured with thesame default IMSI and PLMN values broadcast from the test set
- For dual mode testing, GSM speech loopback is supported for GSMbit error ratio (BER) measurements
- 256 bytes inner RAM (256 x 8-bit SRAM)
- 1KB outer RAM (1,024 x 8-bit SRAM)
- 48KB program memorizer (48KB x 8-bit ROM)
- 32KB data memorizer (32KB x 8-bit EEPROM)
- 32KB EEPROM as data memorizer
- Single byte read, write and wipe
- Multi-byte storage (1 byte to 1 page)
- Program clock come from vibrate clock that generated by chipitself
- At the normal temperature, can proceed at least 100,000 timeserase and write operations
- EEPROM data endurance more than ten years
- EEPROM program voltage generated in the chip
- Asynchronous half-duplex transmission protocol
- Two kinds of transmission velocity (372/1 and 512/8)optional
- Randomizer: 8 bits
- Power on reset: internal power on reset mechanism
- Low-power work mode: sleep and clock stop
- Safety mechanism: abnormal voltage/frequency detectionfunction, DPA/SPS attacking immunity
- Working temperature: -25 to 70°C
- Working voltage: 2.7 to 3.3, 4.5 to 5.5V
- Working frequency: 1 to 5MHz (3.57MHz)
- UMTS security variables within the SIM match the defaultsettings of the GSM test and lab applications
- Set-up time is reduced because the SIM is configured with thesame default IMSI and PLMN values broadcast from the test set
- For dual mode testing, GSM speech loopback is supported for GSMbit error ratio (BER) measurements
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