Shenzhen Shunyuanda Technology Co. Ltd
Shenzhen Shunyuanda Technology Co. Ltd
DDR3 RAM with 512MB to 2GB Flash Memory Capacity and 533/667/800MHz Frequency
  • DDR3 RAM with 512MB to 2GB Flash Memory Capacity and 533/667/800MHz Frequency
DDR3 RAM with 512MB to 2GB Flash Memory Capacity and 533/667/800MHz Frequency

DDR3 RAM with 512MB to 2GB Flash Memory Capacity and 533/667/800MHz Frequency

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Basic Info
Basic Info
Payment Type: Telegraphic Transfer in Advance (Advance TT, T/T)
Product Description
Product Description
  • 168/184/240-pin socket type, dual-in line memory module(DIMM)
  • Data rate: 533/667/800Mbps (maximum)
  • 2.5V DC (SSTL-2 compatible), I/O for DDR product, 1.8V DC powersupply for DDR2 product
  • Chipset organization: 64 x 8, 128 x 4 and 128 x 8
  • Double-data-rate architecture and two data transfers/clockcycle
  • Bi-directional, differential data strobe (DOS) istransmitted/received with data, to be use in capturing data atreceiver
  • Data inputs and outputs are synchronized with DOS
  • DOS is edge aligned with data for read, center aligned withdata for write
  • Various clock input (CK)
  • DLL aligns DO and DOS transitions with CK transition
  • Brands of chipset: ELPIDA, Mosel and NANYA
  • Four internal banks for concurrent operation (component)
  • Posted CAS by programmable additive latency for better commandand data bus efficiency
  • Programmable burst length: 2, 4 and 8
  • Programmable/CAS latency (CL): 3
  • Refresh cycle: 8192 refresh cycles/64ms
  • 2 variations of refresh: auto and self
  • 7.8 US maximum average periodic refresh interval
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